Clamping circuit, a semiconductor apparatus including the same, and a clamping method of the semiconductor apparatus

摘要

A semiconductor apparatus that includes: a first high-voltage transistor having a gate and a first electrode, wherein the first electrode is connected to a first pad and a parasitic capacitance forms between the gate and the first electrode; and a clamping circuit that is connected to the gate of the first high-voltage transistor, wherein the clamping circuit detects a change in a level of a gate voltage of the first high-voltage transistor due to electrostatic discharge, and clamps the gate voltage of the first high-voltage transistor according to a result of the detection.