首页> 外国专利> Semiconductor device having insulation layer with concave portion and semiconductor layer formed over concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus

Semiconductor device having insulation layer with concave portion and semiconductor layer formed over concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus

机译:具有具有凹部的绝缘层和形成在凹部上的半导体层的半导体装置,电光装置,半导体装置的制造方法,电光装置的制造方法以及电子设备

摘要

A lower insulation layer includes a concave portion that has a back surface on a first base member side, first to third surfaces which are opposed to the back surface, a fourth surface which is arranged between the first surface and the third surface, and a fifth surface which is arranged between the second surface and the third surface. A semiconductor layer is arranged on the first surface and the second surface. A gate electrode is arranged so as to be opposed to the semiconductor layer on at least the third surface, the fourth surface, and the fifth surface via a gate insulation layer.
机译:下绝缘层包括凹入部分,该凹入部分具有在第一基底构件侧上的后表面,与该后表面相对的第一至第三表面,布置在第一表面和第三表面之间的第四表面以及第五表面。布置在第二表面和第三表面之间的表面。半导体层布置在第一表面和第二表面上。栅电极被布置为经由栅绝缘层在至少第三表面,第四表面和第五表面上与半导体层相对。

著录项

  • 公开/公告号US9299850B2

    专利类型

  • 公开/公告日2016-03-29

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORPORATION;

    申请/专利号US201414254427

  • 发明设计人 MASASHI NAKAGAWA;

    申请日2014-04-16

  • 分类号H01L29/786;H01L27/12;H01L29/423;

  • 国家 US

  • 入库时间 2022-08-21 14:28:59

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