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Method for polishing both sides of a semiconductor wafer

机译:抛光半导体晶片两面的方法

摘要

Both sides of a large diameter semiconductor wafer are polished by the following ordered steps:a) polishing the wafer backside on a polishing pad containing a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer backside and the polishing pad;b) stock polishing the wafer frontside on a polishing pad which contains a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer frontside of and the polishing pad;c) removing microroughness and microdamage from the wafer frontside by polishing the frontside on a polishing pad, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad; andd) final polishing of the wafer frontside by polishing the frontside on a polishing pad containing no fixed abrasive, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad during the polishing step.
机译:通过以下有序步骤抛光大直径半导体晶圆的两面: a)在包含固定磨料的抛光垫上抛光晶片背面,在晶片背面和抛光垫之间引入不含固体的抛光剂溶液; b)在包含固定磨料的抛光垫上对晶片正面进行抛光,将不含固体的抛光剂溶液引入晶片的正面和抛光垫之间; c)通过在抛光垫上抛光前表面来去除晶片前表面的微粗糙度和微损伤,将包含磨料的抛光剂溶液引入晶片前表面和抛光垫之间;和 d)通过在不包含固定磨料的抛光垫上对晶片的前表面进行抛光来对晶片的前表面进行最终抛光,在抛光剂溶液之间引入含磨料的抛光剂溶液。

著录项

  • 公开/公告号US9224613B2

    专利类型

  • 公开/公告日2015-12-29

    原文格式PDF

  • 申请/专利权人 JUERGEN SCHWANDNER;

    申请/专利号US20090582788

  • 发明设计人 JUERGEN SCHWANDNER;

    申请日2009-10-21

  • 分类号H01L21/302;H01L21/461;H01L21/311;B44C1/22;H01L21/304;B24B37/04;B24B37/08;

  • 国家 US

  • 入库时间 2022-08-21 14:28:27

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