SOURCE/DRAIN REGROWTH FOR LOW CONTACT RESISTANCE TO 2D ELECTRON GAS IN GALLIUM NITRIDE TRANSISTORS

摘要

The present description relates to a gallium nitride transistor which includes at least one source/drain structure having low contact resistance between a 2D electron gas of the gallium nitride transistor and the source/drain structure. The low contact resistance may be a result of at least a portion of the source/drain structure being a single-crystal structure abutting the 2D electron gas. In one embodiment, the single-crystal structure is grown with a portion of a charge inducing layer of the gallium nitride transistor acting as a nucleation site.