OXIDE LAYER AND PRODUCTION METHOD FOR OXIDE LAYER, AS WELL AS CAPACITOR, SEMICONDUCTOR DEVICE, AND MICROELECTROMECHANICAL SYSTEM PROVIDED WITH OXIDE LAYER

摘要

One oxide layer 30 of the present invention is provided with an oxide layer (may contain unavoidable impurities) composed of bismuth (Bi) and niobium (Nb). In addition, the oxide layer 30 has a crystal phase of pyrochlore-type crystal structure. As a result, an oxide layer 30 containing an oxide of bismuth (Bi) and niobium (Nb) having a high dielectric constant not obtained by the conventional method can be obtained.