OXIDE LAYER, OXIDE LAYER MANUFACTURING METHOD, CAPACITOR WITH OXIDE LAYER, SEMICONDUCTOR DEVICE AND MICRO ELECTROMECHANICAL SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide an oxide layer which is composed of bismuth (Bi) and niobium (Nb), and has a high dielectric constant.SOLUTION: An oxide layer 30 of one embodiment comprises an oxide layer (able to contain inevitable impurity) composed of bismuth (Bi) and niobium (Nb). In addition, the oxide layer 30 has a crystal phase of a pyrochlore crystal structure. As a result, the oxide layer 30 containing an oxide which is composed of bismuth (Bi) and niobium (Nb), and has a high dielectric constant could not be obtained before can be obtained.