首页> 外国专利> OXIDE LAYER AND PRODUCTION METHOD FOR OXIDE LAYER, AS WELL AS CAPACITOR, SEMICONDUCTOR DEVICE, AND MICROELECTROMECHANICAL SYSTEM PROVIDED WITH OXIDE LAYER

OXIDE LAYER AND PRODUCTION METHOD FOR OXIDE LAYER, AS WELL AS CAPACITOR, SEMICONDUCTOR DEVICE, AND MICROELECTROMECHANICAL SYSTEM PROVIDED WITH OXIDE LAYER

机译：氧化物层及其制造方法，电容器，半导体装置以及由该氧化物层构成的微机电系统

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摘要

An oxide layer 30 according to the invention consists of bismuth (Bi) and niobium (Nb) (possibly including inevitable impurities). The oxide layer 30 also includes crystal phases of a pyrochlore crystal structure. The obtained oxide layer 30 includes oxide consisting of bismuth (Bi) and niobium (Nb) and has high permittivity that has never been achieved in the conventional technique.

机译：根据本发明的氧化物层 30 由铋（Bi）和铌（Nb）（可能包括不可避免的杂质）组成。氧化物层 30 还包括烧绿石晶体结构的晶相。所获得的氧化物层 30 包括由铋（Bi）和铌（Nb）组成的氧化物，并且具有高介电常数，这是常规技术中从未达到的。 展开▼

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公开/公告号US2016016813A1

专利类型

公开/公告日2016-01-21

原文格式PDF

申请/专利权人 JAPAN SCIENCE AND TECHNOLOGY AGENCY;
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申请/专利号US201414773309

发明设计人 TATSUYA SHIMODA;EISUKE TOKUMITSU;MASATOSHI ONOUE;TAKAAKI MIYASAKO;
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申请日2014-01-06

分类号C01G33;H01B1/08;

国家 US

入库时间 2022-08-21 14:36:10

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机译：氧化物层，氧化物层的制造方法，具有氧化物层的电容器，半导体装置和微机电系统

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