首页> 外国专利> CHEMICAL VAPOR DEPOSITION (CVD) SYSTEM, ARRANGEMENT OF CHEMICAL VAPOR DEPOSITION SYSTEM, AND CHEMICAL VAPOR DEPOSITION METHOD

CHEMICAL VAPOR DEPOSITION (CVD) SYSTEM, ARRANGEMENT OF CHEMICAL VAPOR DEPOSITION SYSTEM, AND CHEMICAL VAPOR DEPOSITION METHOD

机译:化学气相沉积(CVD)系统,化学气相沉积系统的布置和化学气相沉积方法

摘要

Disclosed are a chemical vapor deposition system, a method and a system arrangement thereof. The system includes a coating chamber, a fluid injection system and a radiant heating element array. The coating chamber has an external boundary including a coating area vicinity and a connection part arranged axially around the external boundary, and is placed at a fixed and vertical position. The fluid injection system includes a fluid injection array which is prepared and arranged to inject a fluid into the coating chamber for chemical vapor deposition coating of a workpiece in a vacuum pump and the coating chamber. An array of a radiant heating element is arranged at an outside of the coating chamber, and is connected to the external boundary of the coating chamber through heat and heats a zone in the coating chamber. The method of the present invention uses the system thereof. The arrangement includes more than one chemical vapor deposition system.;COPYRIGHT KIPO 2016
机译:公开了一种化学气相沉积系统,方法及其系统布置。该系统包括涂覆室,流体注入系统和辐射加热元件阵列。涂覆室具有包括涂覆区域附近的外部边界和沿轴向围绕该外部边界布置的连接部,并且该涂覆室被放置在固定且竖直的位置。该流体注入系统包括流体注入阵列,该流体注入阵列被准备和布置成将流体注入到涂覆室中,以在真空泵和涂覆室中对工件进行化学气相沉积涂覆。辐射加热元件的阵列布置在涂覆室的外部,并且通过加热而连接到涂覆室的外部边界,并加热涂覆室中的区域。本发明的方法使用其系统。该安排包括一个以上的化学气相沉积系统。; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20160022279A

    专利类型

  • 公开/公告日2016-02-29

    原文格式PDF

  • 申请/专利权人 SILCOTEK CORP.;

    申请/专利号KR20150116883

  • 申请日2015-08-19

  • 分类号C23C16/00;C23C16/44;C23C16/453;C23C16/48;C23C16/52;

  • 国家 KR

  • 入库时间 2022-08-21 14:14:59

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