A FIELD EFFECT TRANSISTOR AND A GAS DETECTOR INCLUDING A PLURALITY OF FIELD EFFECT TRANSISTORS

摘要

there is provided a field-effect transistor, such a field effect transistor comprising a source, wherein the Sound There are spaces between the electrodes comprises a plurality of projections, and the projections of the source electrode. The drain comprises a plurality of electrode protrusions, each of the drain electrode projection of the electrode protrusions space drain located in a space disposed switch between the drain and source projecting portion of between the source - so as to form the source electrode connection regions do. Gate, a drain-source electrode spaced apart from the drain region-forming such that the channel between the source region and the gate electrode connected to the gate proceeds in parallel with the channel. A plurality of nanostructures, are the drain-source electrode located within the region drain to form an electrical connection between the electrode of the projection electrode connected to the drain and the source in the source region. The present invention extends to a gas detector comprising a plurality of field-effect transistor as described above which is located on the substrate. ;