REFLECTIVE PHOTOMASK AND PRODUCTION METHOD THEREFOR

摘要

reflection type photomask 10 has a multi-layer for reflecting exposure light, including light of less than the substrate 11, it is formed on the substrate 11, the wavelength 5nm or more as for the lithographic 15nm a reflective film 12, a multilayer film 12 is formed on, with absorbing the exposure light, the circuit pattern 15 or the circuit pattern forming scheduled region is absorbing film 14 and the circuit pattern 15 formed or circuit on the outer peripheral side of the expected pattern forming regions, substrate 11 is a multilayer reflective film 12 and the absorption layer is formed be some removal of the 14, the light-shielding for blocking an exposed part of the light reflected by the multilayer reflective film 12 on the zone (B) and a shielding area (B) in a formed part to the pitch of less than 3000nm of the exposed surface of the substrate (11b), having a wavelength of less than 140nm at least 800nm included in the exposure light shielding region (B) and a plurality of projections (1) to suppress the out-of-band incident light reflections. ;