NANO LIGHT EMITTING DIODES OR MICRO LIGHT EMITTING DIODES FABRICATED BY USING ION IMPLANTATION AND ITS FABRICATING METHOD

摘要

ion implantation or a plasma doping technology manufactured by using a light emitting diode and a method of manufacturing the same are provided. Light emitting diode according to the invention comprises an active layer formed between the substrate and the n-GaN layer and a p-GaN layer to form an insulating portion by ion implantation to form the n-type GaN portion by ion implantation. The etched by this structure can solve the problem occurring in the case of manufacturing a light emitting diode used. ;