METHOD FOR ELECTRON BEAM INDUCED ETCHING OF LAYERS CONTAMINATED WITH GALLIUM

摘要

The present invention relates to an electron beam induction etching method of gallium-contaminated layers (120, 122). The method comprises the following steps: providing at least one first compound containing a halogen as an etching gas on a region where an electron beam impinges on the layer 120,220, Providing at least one second compound as a precursor gas for removing gallium from this region.