METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT

摘要

A method for bonding a first substrate wafer and a second substrate wafer (102, 104) by creating an aluminum/germanium bond, an aluminum layer disposed on the first substrate wafer (104), a germanium layer disposed on the second substrate wafer (102), the method comprising: placing the first substrate wafer (104) in a first chuck; placing the second substrate wafer (102) in a second chuck; aligning the first substrate wafer and the second substrate wafer; and forming a eutectic bond between the germanium layer and the aluminum layer, wherein the eutectic bond is formed by applying a force across the first chuck and the second chuck, and ramping temperature of at least one of the first chuck or the second chuck over a eutectic temperature of the aluminum/germanium bond.