SUBSTRATE WITH MULTI-LAYER REFLECTION FILM FOR EUV LITHOGRAPHY, REFLECTION TYPE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTION TYPE MASK FOR EUV LITHOGRAPHY, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a reflection type mask blank and a reflection type mask which, in a reflection type mask blank and a reflection type mask, using as a conductive film, a material containing tantalum, solve a problem that film stress shows a stronger tendency of compression stress with passage of time.;SOLUTION: Provided is a substrate having a multi-layer reflection film for EUV lithography formed on a glass substrate and a conductive film formed on a surface of the opposite side relative to the surface having the muti-layer reflection film formed. The conductive film is formed of a material containing tantalum and substantially not containing hydrogen, and is provided with a hydrogen intrusion suppression film to prevent hydrogen from intruding between the glass substrate and the conductive film from the glass substrate to the conductive film.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT