Aluminum gallium indium phosphide based light emitting diode having a concavo-convex gallium nitride layer and manufacturing method thereof

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly to a light emitting diode having a larger band gap and a lower refractive index than an AlGaInP based material on an AlGaInP based light emitting diode To grow a GaN layer with high quality. The AlGaInP-based light emitting diode of the present invention is characterized in that a GaN layer is formed on the upper surface, and the GaN layer preferably has a surface of a fine uneven pattern. This GaN layer can be grown under the same system after growth of the AlGaInP based light emitting diode without a separate additional step.(FIG.