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ALUMINUM-GALLIUM-INDIUM-PHOSPHORUS-BASED LIGHT EMITTING DIODE HAVING GALLIUM NITRIDE LAYER OF UNEVEN TYPE AND METHOD FOR MANUFACTURING SAME
ALUMINUM-GALLIUM-INDIUM-PHOSPHORUS-BASED LIGHT EMITTING DIODE HAVING GALLIUM NITRIDE LAYER OF UNEVEN TYPE AND METHOD FOR MANUFACTURING SAME
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机译:具有不均匀类型的氮化镓层的铝镓铟磷基发光二极管及其制造方法
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摘要
The present invention relates to a light emitting diode and a method for manufacturing same, and more specifically relates to growing a GaN layer of high quality on an upper part of an AlGaInP-based light emitting diode to improve the light extraction efficiency of the light emitting diode, wherein the GaN layer has a larger band gap and a smaller refractive index than AlGaInP-based material. The AlGaInP-based light emitting diode of the present invention is characterized by forming the GaN layer on the upper surface, and the GaN layer preferably has a surface of a fine uneven pattern. The GaN layer can be grown in the same system after forming the AlGaInP-based light emitting diode without an additional process.
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