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Aluminum-gallium-indium-phosphorus-based light emitting diode having gallium nitride layer of uneven type and method for manufacturing same
Aluminum-gallium-indium-phosphorus-based light emitting diode having gallium nitride layer of uneven type and method for manufacturing same
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机译:具有不平坦类型的氮化镓层的铝-镓-铟-磷基发光二极管及其制造方法
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摘要
The present invention relates to a light emitting diode and a method for manufacturing same, and more specifically relates to growing a GaN layer of high quality on an upper part of an AlGaInP-based light emitting diode to improve the light extraction efficiency of the light emitting diode, wherein the GaN layer has a larger band gap and a smaller refractive index than AlGaInP-based material. The AlGaInP-based light emitting diode of the present invention is characterized by forming the GaN layer on the upper surface, and the GaN layer preferably has a surface of a fine uneven pattern. The GaN layer can be grown in the same system after forming the AlGaInP-based light emitting diode without an additional process.
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