SiC SINGLE CRYSTAL CONJUGATE, SiC SINGLE CRYSTAL CONJUGATE MANUFACTURING METHOD, SiC INGOT MANUFACTURING METHOD, AND SiC WAFER MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an SiC single crystal conjugate capable of suppressing the formation heterogeneous polymorphism even if a SiC ingot is long-sized, and an SiC ingot manufacturing method for using the SiC single crystal conjugate as a seed crystal thereby to grow a SiC single crystal.;SOLUTION: An SiC single crystal junction 10 has a junction 3, in which the common crystal faces of two SiC single crystals 1 and 2 are jointed to form joint faces 1a and 1b, and in which the [0001] faces of the two single crystals 1 and 2 are inclined at 0 to 1° across the junction 3 with respect to a direction normal to the junction 3. In a SiC ingot manufacturing method, the SiC single crystals are subjected to a crystal growth on one face of the SiC single crystal junction 10.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT