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Surface unevenness detecting apparatus for a semiconductor film, the surface unevenness detection method of a laser annealing apparatus and the semiconductor film

机译:半导体膜的表面凹凸检测装置,激光退火装置的表面凹凸检测方法以及半导体膜

摘要

PROBLEM TO BE SOLVED: To facilitate the setting of an optimum energy density, by determining unevenness occurring in a thin film by laser anneal specifically and exactly.SOLUTION: A surface unevenness detector for detecting surface unevenness on a semiconductor film irradiated with laser light and annealed includes an inspection light output unit for irradiating the semiconductor film with inspection light, a reflection light receiving unit for receiving the reflection light from the semiconductor film as a color image, an operation unit for digitizing the surface unevenness of the semiconductor film based on the color components of a color image received at the reflection light receiving unit, and a display unit for displaying based on the relationship of the digitized surface unevenness and the energy density of laser light with which a substrate is irradiated. Surface unevenness of the semiconductor film is grasped exactly by displaying based on the relationship of the digitized surface unevenness and the energy density of laser light, thus facilitating selection of a proper energy density.SELECTED DRAWING: Figure 3
机译:解决的问题:通过精确而准确地确定激光退火在薄膜中出现的不均匀度,以便于设置最佳能量密度解决方案:表面不均匀度检测器,用于检测用激光照射并退火的半导体膜上的表面不均匀度包括:检查光输出单元,用于向半导体膜照射检查光;反射光接收单元,用于接收来自半导体膜的反射光作为彩色图像;操作单元,用于基于颜色数字化半导体膜的表面不平坦度反射光接收单元接收的彩色图像的各分量,以及用于基于数字化的表面不平坦度和照射基板的激光的能量密度的关系进行显示的显示单元。通过根据数字化的表面不平整度与激光的能量密度之间的关系进行显示,可以精确掌握半导体膜的表面不平整度,从而有助于选择合适的能量密度。选定的图:图3

著录项

  • 公开/公告号JP6096228B2

    专利类型

  • 公开/公告日2017-03-15

    原文格式PDF

  • 申请/专利权人 株式会社日本製鋼所;

    申请/专利号JP20150002880

  • 发明设计人 奥 信夫;太田 佑三郎;

    申请日2015-01-09

  • 分类号H01L21/66;G01N21/956;H01L21/268;H01L21/20;

  • 国家 JP

  • 入库时间 2022-08-21 13:57:11

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