Production process of large area vertically aligned gallium arsenide semiconductor nanowire array

摘要

TECHNICAL FIELD The present invention relates to a method of manufacturing a GaAs semiconductor nanowire by a bottom-up method, and it relates to a method of manufacturing a GaAs semiconductor nanowire from the outside using a metal thin film made by an economical method for manufacturing a mesh-Voltage and current are applied and holes are injected into the gallium arsenide substrate (h⁺), Thereby continuing to induce a wet etching process to produce vertically aligned gallium arsenide semiconductor nanowire arrays in a large area. The resulting large-area vertically aligned gallium arsenide semiconductor nanowires can be applied to the fabrication of nano-elements such as solar cells, transistors, light emitting diodes and the like. According to the present invention, the diameter of the gallium arsenide semiconductor nanowire can be controlled by controlling the size of the mesh of the metal thin film, and the length of the gallium arsenide semiconductor nanowire is controlled by controlling the etching time, applied voltage and applied current And gallium arsenide semiconductor nanowires can be applied to the fabrication of other III-V semiconductor nanowire arrays.(FIG.