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Production process of large area vertically aligned gallium arsenide semiconductor nanowire array
Production process of large area vertically aligned gallium arsenide semiconductor nanowire array
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机译:大面积垂直取向砷化镓半导体纳米线阵列的生产工艺
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摘要
The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode.
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