LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing. Appendix A. Feasibility Analysis of Gallium-Arsenide Mask Programmable Functions and Logic Arrays for High Perfor

摘要

Circuits critical to the performance of advanced radio, radar and spread spectrum communications systems require advances in the state-of-the-art in semiconductor technology to meet the demands of advanced systems. As these systems increase in complexity, extensive digital circuitry is required in addition to the typical linear signal processing circuits. The power, size and weight of advanced systems also becomes unacceptable without continuous advances in semiconductor technology. Moreover an increasing trend is seen in the use of metal mask selectable functions, programmable logic arrays and gate arrays to implement system specific circuitry in an attempt to lower non-recurring costs, minimize risk and shorten development times. GaAs and other technologies with very high speed power-performance figures-of-merit are critical ingredients in systems implementations which satisfy these needs. To meet these advanced system requirements this project was initiated as a multi-phase/year program to develop a group of mask programmable gallium arsenide (GaAs) circuit elements applicable to high speed/performance communications systems.