首页> 外国专利> SEMICONDUCTOR DEVICE HAVING A METAL OXIDE METAL (MOM) CAPACITOR AND A PLURALITY OF SERIES CAPACITORS AND METHOD FOR FORMING

SEMICONDUCTOR DEVICE HAVING A METAL OXIDE METAL (MOM) CAPACITOR AND A PLURALITY OF SERIES CAPACITORS AND METHOD FOR FORMING

机译:具有金属氧化物金属(MOM)电容器和多个串联电容器的半导体装置及其形成方法

摘要

A capacitor module includes a semiconductor substrate of a first polarity. The substrate includes a deep well of a second polarity, a first well of the first polarity over the deep well, a second well of the second polarity over at least a portion of the deep well, a first capacitor including the first well as a first electrode, a dielectric layer over the first electrode, and an electrically conductive layer as a second electrode over the dielectric layer, and a second capacitor including the second well as a first electrode, a dielectric layer over the first electrode, and an electrically conductive layer as a second electrode over the dielectric layer. The first capacitor is coupled in series with the second capacitor. A metal-oxide-metal (MOM) capacitor overlays and is coupled in parallel with the first and second capacitors.
机译:电容器模块包括第一极性的半导体衬底。衬底包括第二极性的深阱,在深阱之上的第一极性的第一阱,在深阱的至少一部分之上的第二极性的第二阱,包括第一阱和第一阱的第一电容器。电极,位于第一电极上方的介电层,以及作为介电层上方的第二电极的导电层,以及包括第二阱和第一电极的第二电容器,位于第一电极上方的介电层和导电层作为介电层上方的第二电极。第一电容器与第二电容器串联耦合。金属氧化物金属(MOM)电容器覆盖并且与第一电容器和第二电容器并联耦合。

著录项

  • 公开/公告号US2017053930A1

    专利类型

  • 公开/公告日2017-02-23

    原文格式PDF

  • 申请/专利权人 FREESCALE SEMICONDUCTOR INC.;

    申请/专利号US201514828723

  • 发明设计人 ERWIN J. PRINZ;KURT H. JUNKER;

    申请日2015-08-18

  • 分类号H01L27/115;H01L29/423;H01L49/02;H01L27/02;H01L27/118;

  • 国家 US

  • 入库时间 2022-08-21 13:49:40

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