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Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
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机译:在多层电荷俘获区中具有氘化层的非易失性电荷俘获存储器件
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摘要
A charge trap memory device is provided. In one embodiment, the charge trap memory device includes a semiconductor material structure having a vertical channel extending from a first diffusion region formed in a semiconducting material to a second diffusion region formed over the first diffusion region, the vertical channel electrically connecting the first diffusion region to the second diffusion region. A tunnel dielectric layer is disposed on the vertical channel, a multi-layer charge-trapping region including a first deuterated layer disposed on the tunnel dielectric layer, a first nitride layer disposed on the first deuterated layer, and a second nitride layer comprising a deuterium-free trap-dense, oxygen-lean nitride disposed on the first nitride layer. The second nitride layer includes a majority of charge traps distributed in the multi-layer charge-trapping region.
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