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Semiconductor structure and etch technique for monolithic integration of III-N transistors
Semiconductor structure and etch technique for monolithic integration of III-N transistors
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机译:用于III-N晶体管单片集成的半导体结构和蚀刻技术
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摘要
Semiconductor structures are disclosed for monolithically integrating multiple III-N transistors with different threshold voltages on a common substrate. A semiconductor structure includes a cap layer comprising a plurality of selectively etchable sublayers, wherein each sublayer is selectively etchable with respect to the sublayer immediately below, wherein each sublayer comprises a material AlxInyGazN (0≦x, y, z≦1), and wherein at least one selectively etchable sublayer has a non-zero Ga content (0z≦1). A gate recess is disposed in a number of adjacent sublayers of the cap layer to achieve a desired threshold voltage for a transistor. Also described are methods for fabricating such semiconductor structures, where gate recesses and/or ohmic recesses are formed by selectively removing adjacent sublayers of the cap layer. The performance of the resulting integrated circuits is improved, while providing design flexibility to reduce production cost and circuit footprint.
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机译:公开了用于在公共衬底上单片集成具有不同阈值电压的多个III-N晶体管的半导体结构。半导体结构包括覆盖层,该覆盖层包括多个可选择性蚀刻的子层,其中每个子层相对于紧接在其下方的子层是可选择性蚀刻的,其中每个子层包括材料Al x Sub> In y < / Sub> Ga z Sub> N(0≤x,y,z≤1),其中至少一个可选择性蚀刻的子层具有非零的Ga含量(0 展开▼