Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

摘要

We report the demonstration of monolithically integrated light-emitting diodes (LEDs) and power metal-oxide-semiconductor channel high-electron-mobility transistors (HEMTs) in GaN. The structure comprised a direct epitaxial integration of layers typical for a GaN-based LED grown directly on top of the layers of a GaN-based HEMT. The layers were then fabricated into a serially connected pair of GaN LED and metal-oxide-semiconductor-gated 0.3?μm-channel HEMT by exposing the LED/HEMT epitaxial layers in selective area etching. The resulting monolithically integrated circuit shows a full gate voltage modulation of the light output power. This demonstrates compatibility of group-III nitride LED and HEMT processes.