METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD, AND METHOD FOR PRODUCING CZ SINGLE-CRYSTAL SILICON

摘要

During the synthesis of a polycrystalline silicon rod, when the polycrystalline silicon deposition temperatures in a region in the vicinity of a silicon core wire, an R/2 region, and an outermost surface region are respectively represented by T1, T2, and T3, said deposition temperatures are set such that T2 = T1 and T3 = T2, or T2 = T1 and T3 T2, or T2 T1 and T3 T2, or T2 T1 and T3 T2, and the polycrystalline silicon is deposited. When ∆T represents the temperature difference between T3 and the temperature T1' of the region in the vicinity of the silicon core wire when the polycrystalline silicon is being deposited in the outermost surface region, and T1 T2 and T2 T3, said temperature difference may be set such that T1 T3+∆T.