High-performance boron-doped silicon micron-rod anode fabricated using a mass-producible lithography method for a lithium ion battery

摘要

Although silicon (Si) attracts great attention as a high-capacity anode material in lithium ion batteries (LiBs), a large volume being expanded during charge/discharge (de/lithiation) cycling is a significant problem resulting in a fast capacity fade. To prevent the problem, a variety of Si structures with nano/microscales have been incorporated into the anode, but such structures still have difficulties in terms of mass production. Herein, we present a new way to repetitively produce micron boron (B)-doped Si rods from Si wafer through laser interference lithography (LIL) in combination with the metal assisted chemical etching (MACE) process, enabling the mass-production of multiple Si rods at low cost. Moreover, the effects of the B-doping level of the produced Si rods on the electrochemical LiB performances are studied in detail. As a result, the lightly B-doped Si rod (similar to 10(15) atoms cm(-3)) anodes exhibit the highest initial capacity of 3524 mAh g(-1) and cyclic performance, showing a high average Coulombic efficiency (CE) of 98.1% and a capacity fading rate (per cycle) of 0.11% during 500 cycles. It is due to the highest kinetics of de/lithiation on the surface of the lightly B-doped Si rod attributed to favorable phase transition of Si and diffusion of Li ions.