WAFER LEVEL INTEGRATION OF HIGH POWER SWITCHING DEVICES ON CMOS DRIVER INTEGRATED CIRCUIT

摘要

A semiconductor package module and the method for its fabrication are provided. The semiconductor package module includes a substrate, a driver integrated circuit (IC), one or more power switching devices and one or more highly conductive clips. Each of the one or more switching devices is physically integrated in the semiconductor package module at a wafer level and has a gate connected to the driver IC by a gate-to-driver interconnection. Each of the one or more highly conductive clips is connected to a source of a corresponding one of the one or more power switching devices by a source-to-clip interconnection. Also, each of the one or more highly conductive clips has a first surface planarly located in the semiconductor package with a similar first surface of the driver IC for co-bonding of the source-to- clip interconnections and the gate-to-driver interconnections.