An 8 channel, 20 V output CMOS switching driver with 3.3 V power supply using triple-well biasing techniques for integrated MEMS device control

摘要

An 8 channel output switching driver has been implemented for integrated micro-electromechanical systems (MEMS) device control using the 0.18 μm CMOS process technology. The driver can output 20 V switching signals for 1 nF capacitive loads with a 3.3 V power supply. The switching time is less than 100 μs. To obtain a high output voltage that exceeds the transistors' and capacitors' breakdown voltages, a new charge pump and a discharge circuit, using optimal transistor-well-biasing techniques for triple-well-structured n-MOS transistors, were investigated, and the circuit parameters were also optimized to obtain high-speed switching.