首页> 外国专利> SINGLE-CRYSTAL DIAMOND AND METHOD FOR MANUFACTURING SAME TOOL INCLUDING SINGLE-CRYSTAL DIAMOND AND COMPONENT INCLUDING SINGLE-CRYSTAL DIAMOND

SINGLE-CRYSTAL DIAMOND AND METHOD FOR MANUFACTURING SAME TOOL INCLUDING SINGLE-CRYSTAL DIAMOND AND COMPONENT INCLUDING SINGLE-CRYSTAL DIAMOND

机译:单晶金刚石及其制造方法,包括单晶金刚石和包括单晶金刚石的零件

摘要

The single crystal diamond 20 is a point at the tip of the crystal growth main surface 20m at which the crystal defect line 20dq indicating the line in which the crystal defects 20d exist on the X-ray topography with respect to the crystal growth main surface 20m reaches the crystal growth main surface 20m And a group of crystal defect points (20dp) collectively exist. In the single crystal diamond 20, a plurality of crystal defective linear aggregate regions 20r extending linearly in a direction within 30 占 from a direction in which a group of crystal defect points (20dp) collectively and arbitrarily specified are present in parallel do. Accordingly, there is provided a single crystal diamond suitably used for a cutting tool, an abrasive tool, an optical component, an electronic component, a semiconductor material, and the like.
机译:单晶金刚石20是在晶体生长主表面20m的尖端处的晶体缺陷线20dq相对于晶体生长主表面20m的位置,该晶体缺陷线20dq指示在X射线形貌上存在晶体缺陷20d的线。到达晶体生长主面20m,并共同存在一组晶体缺陷点(20dp)。在单晶金刚石20中,平行地存在多个晶体缺陷线性聚集体区域20r,该线性缺陷聚集体区域20r在从共同且任意地指定一组晶体缺陷点(20dp)的方向起的30个范围内的方向上线性延伸。因此,提供了适用于切削工具,研磨工具,光学部件,电子部件,半导体材料等的单晶金刚石。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号