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MEMS MEMS MEMS PRESSURE SENSOR AND MEMS INERTIAL SENSOR INTEGRATION STRUCTURE

机译:MEMS MEMS MEMS压力传感器和MEMS惯性传感器集成结构

摘要

The present invention discloses an MEMS pressure sensor, MEMS inertial sensor integrated structure. Wherein the integrated structure includes an insulating layer formed on a substrate, a first lower electrode and a second lower electrode all formed on the insulating layer; And a second upper electrode constituting a reference capacitor together with a first upper electrode and a second lower electrode constituting a pressure sensitive capacitor together with the first lower electrode; Further comprising a fixed electrode plate constituting an inertial sensing capacitor of the inertial sensor together with an inertia sensitive structure and an inertia sensitive structure supported above the substrate through the third support portion; Here, the cover further includes an inertia sensitive structure and a cover for mounting the inertial detection capacitor composed of the fixed electrode plate on the substrate. By integrating the MEMS inertial sensor and the MEMS pressure sensor on the same substrate, the integrated structure of the present invention can effectively reduce the area of the chip, thereby lowering the cost of the chip, and the entire chip can be mounted through the primary mounting And the cost of mounting the chip can be reduced.
机译:本发明公开了一种MEMS压力传感器,MEMS惯性传感器的集成结构。其中,该集成结构包括形成在基板上的绝缘层,均形成在该绝缘层上的第一下部电极和第二下部电极。并且,第二上部电极与第一下部电极一起构成参考电容器,第一上部电极和第二下部电极与第一下部电极一起构成压敏电容器。还包括固定电极板,该固定电极板与惯性敏感结构和通过第三支撑部支撑在基板上方的惯性敏感结构一起构成惯性传感器的惯性感测电容器;这里,盖还包括惯性敏感结构和用于将由固定电极板组成的惯性检测电容器安装在基板上的盖。通过将MEMS惯性传感器和MEMS压力传感器集成在同一基板上,本发明的集成结构可以有效地减小芯片面积,从而降低了芯片成本,并且整个芯片可以通过一次安装安装并且可以降低安装芯片的成本。

著录项

  • 公开/公告号KR20170094425A

    专利类型

  • 公开/公告日2017-08-17

    原文格式PDF

  • 申请/专利权人 고어텍 인크;

    申请/专利号KR20177019439

  • 发明设计人 정 구오광;

    申请日2015-12-14

  • 分类号B81B7;B81C1;

  • 国家 KR

  • 入库时间 2022-08-21 13:26:52

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