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MEMS PRESSURE SENSOR AND MEMS INERTIAL SENSOR INTEGRATION STRUCTURE

机译:MEMS压力传感器和MEMS惯性传感器集成结构

摘要

To provide new technical solution means for an integrated structure of an MEMS pressure sensor and an MEMS inertia sensor.SOLUTION: An integrated structure of an MEMS pressure sensor and an MEMS inertia sensor: comprises an insulating layer 2 formed on a substrate 1, a first lower electrode 3a and a second lower electrode 3b both formed on the insulating layer; further comprises a first upper electrode 4a forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode 4b forming a standard capacitor together with the second lower electrode; further comprises an inertia-sensitive structure 4c supported above the substrate via a third support part 7c, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and further comprises a cover 8 which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate.SELECTED DRAWING: Figure 1
机译:为了为MEMS压力传感器和MEMS惯性传感器的集成结构提供新的技术解决方案,解决方案:MEMS压力传感器和MEMS惯性传感器的集成结构:包括形成在基板1上的绝缘层2,下部电极3a和第二下部电极3b均形成在绝缘层上。进一步包括:第一上部电极4a,与第一下部电极一起形成气压敏电容器;以及第二上部电极4b,与第二下部电极一起形成标准电容器。还包括经由第三支撑部7c支撑在基板上方的惯性敏感结构4c,以及与该惯性敏感结构一起形成惯性传感器的惯性检测电容器的固定电极板。进一步包括盖8,盖8将由惯性敏感结构和固定电极板组成的惯性检测电容器封装在基板上。

著录项

  • 公开/公告号JP2019105647A

    专利类型

  • 公开/公告日2019-06-27

    原文格式PDF

  • 申请/专利权人 GOERTEK INC;

    申请/专利号JP20190038245

  • 发明设计人 ZHENG GUOGUANG;

    申请日2019-03-04

  • 分类号G01L9;G01P15/125;G01P15/08;

  • 国家 JP

  • 入库时间 2022-08-21 12:23:58

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