The amorphous Oxide Thin Film Transistor to Enhance the Optical Reliability

摘要

The present invention provides an oxide thin film transistor. The oxide thin film transistor comprises: a substrate; a gate electrode which is extended in a first direction on the substrate; a gate insulating film which is placed on the gate electrode to cross the gate electrode; an oxide semiconductor layer which is placed on the gate insulating film, and extended from both sides of the gate electrode in a second direction orthogonal to the first direction; a source electrode and a drain electrode which are placed on the oxide semiconductor layer and spaced apart from each other around the gate electrode; and a protective layer which is placed on the oxide semiconductor layer exposed between the source electrode and the drain electrode. The protective layer comprises: a lower protective layer which is made of an insulator; a metal nanostructure which is placed on the lower protective layer; and an upper protective layer which is made of an insulator and placed on the metal nanostructure. According to the present invention, the stability of an oxide thin film transistor can be improved by providing a protective layer which absorbs light over a band gap of an oxide semiconductor.