The amorphous Oxide Thin Film Transistor to Enhance the Optical Reliability

摘要

The present invention provides an oxide thin film transistor. The oxide thin film transistor comprises a substrate; A gate electrode extending in the first direction on the substrate; A gate insulating film disposed on the gate electrode and disposed to cross the gate electrode; An oxide semiconductor layer disposed on the gate insulating layer and extending in a second direction perpendicular to the first direction on both sides of the gate electrode; Source and drain electrodes disposed on the oxide semiconductor layer and spaced apart from each other around the gate electrode; And a protective layer disposed on the exposed oxide semiconductor layer between the source electrode and the drain electrode. Wherein the protective layer comprises a lower protective layer composed of an insulator; A metal nanostructure disposed on the lower protective layer; And an upper protective layer composed of an insulator and disposed on the metal nanostructure.