MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

(H ₂ O) molecules are introduced into the chamber 51 and the aluminum nitride substrate 1 having the semiconductor layer formed on the first main surface And an oxide film forming step of forming an oxide film including an amorphous oxide film on the second main surface 1b located on the opposite side of the first main surface of the aluminum nitride substrate 1.