BIPOLAR PUNCH-THROUGH SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUCTOR DEVICE

摘要

There is provided a bipolar diode 1 having a drift layer 2 of a first conductivity type on the cathode side 13 and an anode layer 3 of a second conductivity type on the anode side 14. The anode layer 3 includes a diffused anode contact layer 5 and a double diffused anode buffer layer 4. The anode contact layer 5 is arranged to a depth of up to 5 mu m and the anode buffer layer 4 is arranged to a depth of 18 to 25 mu m. The anode buffer layer 4 has a thickness of 8.0 * 10¹⁵To 2.0 * 10¹⁶Cm^-3 RTI ID = 0.0 * 10 /RTI ¹⁴To 5.0 * 10¹⁴Cm^-3(Split C and D), resulting in excellent softness of the device and low leakage current. Split A and B represent the anode layer doping concentrations of the prior art diodes, which also have lower doping concentrations over all depths, resulting in high leakage currents or enhanced doping concentrations that cause poor softness.;