Method for producing unilaterally arranged structured contacts in a layer arrangement for a photovoltaic component

摘要

According to the invention, a doped silicon-rich layer which is nanocrystalline or amorphous is used according to the invention as the first doped semiconductor layer of one conductivity type and / or as the second doped semiconductor layer of opposite conductivity type. For the at least one masking layer, a material with different selective etchability with respect to the first doped silicon-rich layer is used, the etching of the patterned masking layer assembly is performed in at least one etching step at least to remove the first doped silicon-rich layer in the contact openings and at the same roughened the remaining exposed surface of the at least one masking layer and at least partially removing the still remaining masking layer and arranged on its rough surface second doped silicon-rich layer to expose the structured first silicon-rich Schi executed by means of a lift-off process in an HF-containing solution.