首页> 外国专利> INTEGRATED CIRCUIT COMPRISING A POWER LIMITER AFFECTING THE PARASITE DIODE OF BIPOLAR TECHNOLOGIES

INTEGRATED CIRCUIT COMPRISING A POWER LIMITER AFFECTING THE PARASITE DIODE OF BIPOLAR TECHNOLOGIES

机译:集成功率限制器的集成电路,该功率限制器影响双极技术的寄生二极管

摘要

This integrated circuit comprises a power limiter (110) comprising a pair of diodes (11, 12) connected in parallel with each other and in "head-to-tail" configuration, each diode being made in a NWELL box or a box PWELL delimited in a substrate of the integrated circuit, the substrate being connected to a ground of the integrated circuit, the diodes being connected between a first line (21) and a second line (22) respectively extending between an input terminal and a output terminal of the limiter, each of the first and second lines being polarized by applying a potential developed from a voltage signal to be limited (S) and a common mode potential (VCM), a value of said potential common mode being set according to a threshold voltage activation of a parasitic diode (14) existing between the substrate and the box within which is formed one of the diodes (12).
机译:该集成电路包括功率限制器(110),该功率限制器包括以“头对尾”配置彼此并联连接的一对二极管(11、12),每个二极管在NWELL盒或PWELL盒中制成。在所述集成电路的基板中,所述基板连接至所述集成电路的接地,所述二极管连接在分别在所述集成电路的输入端子和输出端子之间延伸的第一线(21)和第二线(22)之间。限幅器,通过施加从要限制的电压信号(S)和共模电势(VCM)产生的电势来极化第一和第二线中的每条,所述电势共模的值根据阈值电压激活来设置在衬底和盒子之间存在一个寄生二极管(14),在其中形成一个二极管(12)。

著录项

  • 公开/公告号FR3043854A1

    专利类型

  • 公开/公告日2017-05-19

    原文格式PDF

  • 申请/专利权人 THALES;

    申请/专利号FR20150002377

  • 申请日2015-11-12

  • 分类号H02H7/20;H01L27/06;H03F1/52;

  • 国家 FR

  • 入库时间 2022-08-21 13:21:15

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