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Integrated circuit in complementary circuit technology comprising a substrate bias voltage generator and a Schottky diode
Integrated circuit in complementary circuit technology comprising a substrate bias voltage generator and a Schottky diode
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机译:互补电路技术中的集成电路,包括衬底偏置电压发生器和肖特基二极管
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摘要
An integrated circuit in complementary circuit technology comprising a substrate bias voltage generator which applies a negative (positive) substrate bias voltage to the p(n) substrate in which n(p) tubs are inserted. The source regions of the n(p)-channel FETs arranged in the substrate lie at ground potential. In order to avoid "latch-up" effects, an output of the substrate bias voltage generator is connected via a Schottky diode to a circuit point that lies at ground potential.
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