Hemt of the normally open type having a threshold voltage high and a conduction resistance of another

摘要

The present invention relates to a field effect transistor (1) to high electron mobility of the normally open type, comprising: - the first and second semiconductor layers (14, 15) which are superposed to form a layer of gas by electrons (16); - a control grid (23); - a trench is formed in the second layer of semi-conductive (15); - a pin (17) of gan or alloy of gan, with a p type doping, is disposed in the trench; - the control grid (23) is positioned plumb with said stud.