METHOD OF PRODUCTION OF A HEMT TRANSFER OF THE TYPE NORMALLY SPENT WITH RECEIVED RESISTANCE IN ACCESS STATE AND HEMT TRANSFER

摘要

A manufacturing method of a HEMT, comprising the steps of: forming a heterostructure (7); forming a first gate layer of intrinsic semiconductor material on the heterostructure; forming a second gate layer, containing dopant impurities of a P type, on the first gate layer; removing first portions of the second gate layer so that second portions, not removed, of the second gate layer form a doped gate region (12); and carrying out a thermal annealing of the doped gate region so as to cause a diffusion of said dopant impurities of a P type in the first gate layer and in the heterostructure, with a concentration, in the heterostructure, that decreases as the lateral distance from the doped gate region increases.