首页> 外国专利> COBALT-CARBON EUTECTIC METAL ALLOY OHMIC CONTACT FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS

COBALT-CARBON EUTECTIC METAL ALLOY OHMIC CONTACT FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS

机译:碳纳米管场效应晶体管的钴碳共晶合金热接触

摘要

A cobalt-carbon (Co—C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co—C eutectic metal alloy, and creating an ohmic contact by depositing the Co—C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co—C eutectic metal alloy is in direct contact with the CNTs. The Co—C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.
机译:公开了一种用于射频(RF)碳纳米管(CNT)场效应晶体管(FET)器件的钴碳(Co-C)共晶金属合金欧姆接触及其制造方法。方法的实施方式包括提供石墨坩埚,将Co和C源放置在石墨坩埚内,加热包含Co和C源的石墨坩埚,使得Co和C源与来自石墨坩埚的石墨结合从而形成Co。 -C共晶金属合金,并通过将Co-C共晶金属合金直接沉积在RF CNT FET器件的CNT的顶表面上,从而使Co-C共晶金属合金与CNT直接接触,从而形成欧姆接触。以这种方式形成的Co-C共晶金属合金欧姆接触始终稳定且均匀,并用作高功函数层,该高功函数层还用作对CNT的粘附层。

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