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Novel applications of carbon nanotube: Sensor, one-dimensional contact, and field-effect-transistor.

机译:碳纳米管的新应用:传感器,一维接触和场效应晶体管。

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摘要

A single-walled carbon nanotube (SWNT) can be viewed as a graphene sheet rolled up into a seamless hollow cylinder. Since the discovery in 1991, carbon nanotube has aroused tremendous research efforts worldwide. They have well defined structure in the atomic scale, and are electrically stable, mechanically robust and chemically inert. They are seen as the building blocks for the next generation of electronic, optical, electrochemical, electromechanical devices in the nanometer scale. In this thesis, I will demonstrate that polyethyleneimine and nafion functionalization impart high sensitivity and selectivity to carbon nanotube gas sensor arrays. I will also describe the fabrication of the first SWNT quasi-one dimensional electrodes. The sharp quasi-1D geometry of the source (S) and drain (D) electrodes can facilitate the optimum gate control for transistors involving Schottky barriers (SB) at the contact (which is the case for organic field-effect-transistors). I will also discuss the hydrogenation and hydro-carbonation (etching) of SWNTs. The temperature, power, and diameter dependences of hydrogenation and hydro-carbonation were revealed. I will also demonstrate the selective plasma etching of metallic SWNTs. We found strong diameter dependence of the selectivity. In the diameter range of 1.4-1.8nm, metallic SWNTs can be effectively etched and removed by methane plasma treatment, while the semiconducting SWNTs will remain. This selective plasma etching method might be a key step for large scale SWNTs based field-effect-transistors manufacturing.
机译:单壁碳纳米管(SWNT)可以看作是卷成无缝空心圆柱体的石墨烯片。自从1991年发现碳纳米管以来,碳纳米管在全世界引起了巨大的研究努力。它们在原子尺度上具有定义明确的结构,并且具有电稳定性,机械强度和化学惰性。它们被视为纳米级下一代电子,光学,电化学,机电设备的基础。在本文中,我将证明聚乙烯亚胺和nafion官能化赋予碳纳米管气体传感器阵列高灵敏度和选择性。我还将描述第一个SWNT准一维电极的制造。源电极(S)和漏电极(D)的准准1D几何形状可以简化接触时涉及肖特基势垒(SB)的晶体管的最佳栅极控制(有机场效应晶体管就是这种情况)。我还将讨论单壁碳纳米管的氢化和碳氢化(蚀刻)。揭示了氢化和碳酸氢化反应的温度,功率和直径依赖性。我还将演示金属SWNT的选择性等离子体蚀刻。我们发现选择性对直径的依赖性很大。在1.4-1.8nm的直径范围内,可以通过甲烷等离子体处理有效地蚀刻和去除金属单壁碳纳米管,而半导体单壁碳纳米管将保留下来。对于基于SWNT的大规模场效应晶体管制造而言,这种选择性等离子体刻蚀方法可能是关键的一步。

著录项

  • 作者

    Qi, Pengfei.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Chemistry Analytical.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 93 p.
  • 总页数 93
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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