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PRECURSORS FOR GST FILMS IN ALD/CVD PROCESSES
PRECURSORS FOR GST FILMS IN ALD/CVD PROCESSES
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机译:ALD / CVD工艺中GST薄膜的前体
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摘要
A process of making an antimony-containing or bismuth containing film such as a germanium-antimony-tellurium alloy (GST) or germanium-bismuth-tellurium (GBT) film uses a process selected from atomic layer deposition and chemical vapor deposition. A silylantimony precursor or silylbismuth precursor is used as a source of antimony or bismuth.
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