ALD/CVD GST PRECURSORS FOR GST FILMS IN ALD/CVD PROCESSES

摘要

The present invention relates to a method for manufacturing a germanium-antimony-tellurium alloy (GST) or a germanium-bismuth-tellurium (GBT) film using a process selected from a group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for an alloy film. The present invention also relates to a method for manufacturing antimony alloy with other elements using a process selected from a group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony or silylbismuth precursor is used as a source of antimony or bismuth.