Pure Co films of low resistivity and high conformality by low temperature thermal CVD/ALD using novel Co precursors

摘要

A new family of highly volatile alkylsilyl-functionality Co precursors, RSiCo(CO), has been synthesized. One of them, EtSiCo(CO), has been evaluated by low temperature thermal chemical vapor deposition (CVD) and atomic layer deposition (ALD), which gave low resistive (29 μΩ·cm) pure Co films with a good step overage. Dynamic stability test of EtSiCo(CO) also exhibited a better stability at 40°C and 50°C, compared to CCTBA, a conventional Co precursor.