新型MPCVD装置在高功率密度下高速沉积金刚石膜

摘要

使用自行研制的新型MPCVD装置,以H2-CH4为气源,在输入功率为5kW,沉积压力分别为13.33、26.66kPa和不同的甲烷浓度下制备了金刚石膜。利用等离子体发射光谱法对等离子体中的H原子和含碳的活性基团浓度进行了分析。用扫描电镜、激光拉曼谱对金刚石膜的表面和断口形貌、金刚石膜的品质等进行了表征。实验结果表明,使用新型MPCVD装置能够在较高的功率密度下进行金刚石膜的沉积;提高功率密度能使等离子体中H原子和含碳活性基团的浓度明显增加,这将提高金刚石膜的沉积速度,并保证金刚石膜具有较高的质量。%Polycrystalline diamond films were grown by using H2-CH4 as the source gas in a new type microwave plasma CVD reactor with an input power of 5kW,gas pressure of 13.33 and 26.66kPa and different methane concentrations.Optical emission spectroscopy was used to evaluate the concentrations of H atoms and carbon active groups in the plasma.The surface morphology,fracture morphology and the quality of the films were examined by using scanning electron microscope and Raman spectrum.Experimental results showed that the new type microwave plasma CVD reactor was able to form diamond films in the condition of high power density.The concentrations of H atoms and carbon active groups were obviously increased by enhancing the power density,and hence the deposition rates of diamond films will be increased while keeping the quality of the diamond films as well.