ALD/CVD GST PRECURSORS FOR GST FILMS IN ALD/CVD PROCESSES

摘要

The present invention provides a process for preparing a germanium-antimony-tellurium (GST) alloy or germanium-bismuth-tellurium (GBT) film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein the silyl Antimony precursors are used as a source of antimony for alloy films. The present invention is also a method for producing an antimony alloy with other elements using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein silylantimony or silylbismuth precursor is used as a source of antimony or bismuth It is about a method.