PRODUCTION METHOD OF YTTRIUM OXIDE-CONTAINING THIN FILM BY ATOMIC LAYER DEPOSITION METHOD

摘要

To provide a method for producing on a substrate, a high-quality yttrium oxide-containing thin film at a low reaction temperature by using tris (second butyl cyclopentadienyl) yttrium as a raw material.SOLUTION: An atomic layer deposition method is adopted, in which tris (second butyl cyclopentadienyl) yttrium is used as raw material gas, and steam is used as reactive gas.SELECTED DRAWING: Figure 1